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lp62s16256f - i series preliminary 256k x 16 bit low voltage cmos sram prelimi nary (november, 2002, version 0.0) amic technology, corp. document title 256k x 16 bit low voltage cmos sram revision history rev. no. history issue date remark 0.0 initial issue november 22, 2002
lp62s16256f - i series 256k x 16 bit low voltage cmos sram preliminary (november, 2002, version 0 .0) 1 amic technology, corp. features n operating voltage: 2. 7 v to 3.6v n access times: 55ns / 70ns (max.) n current: very low power version: operating: 40ma (max.) standby: 10 m a (max.) n full static operation, no clock or refreshing required n all inputs and outputs are directly ttl - compatible n common i/o using three - state output n data retention voltage: 2.0v (min.) n available in 44 - pin tsop and 48 - ball csp (6 8mm) packages general description the lp62s16256f - i is a low operating current 4,194,304 - bit static random access memory organized as 262,144 words by 16 bits and operates on low power voltage from 2. 7 v to 3.6v. it is built using amic's high performance cmos process. inputs and three - state outputs are ttl compatible and allow for direct interfacing with common system bus structures. the chip enable input is provided for power - down, device enable. two byte enable inputs and an output enable input are included for easy i nterfacing. data retention is guaranteed at a power supply voltage as low as 2.0v. product family power dissipation product family operating temperature vcc range speed data retention (i ccdr , typ.) standby (i sb1 , typ.) operating (i cc2 , typ.) package type lp62s16256f - i - 40 c ~ +85 c 2.7v~3.6v 55ns / 70ns 0.08 m a 0.3 m a 5ma 44l tsop 48b csp 1. typical values are measured at vcc = 3.0v, t a = 25 c and not 100% tested. 2. data retention current vcc = 2.0v. pin configurations n n tsop n n csp (chip size pa ckage) 48 - pin top view i/o 9 i/o 10 gnd vcc i/o 15 i/o 16 nc a8 nc a9 a12 a10 a11 nc a13 a14 a15 i/o 8 i/o 7 i/o 3 i/o 1 gnd vcc a0 a3 a5 a6 a4 a1 a2 nc 6 5 4 3 2 1 a b c d e f g h i/o 14 i/o 13 i/o 12 i/o 11 a17 nc a7 a16 i/o 2 i/o 4 i/o 5 i/o 6 lb hb we oe ce 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 a3 a2 a1 a0 ce i/o 1 i/o 2 i/o 3 i/o 4 vcc gnd i/o 5 i/o 6 i/o 7 i/o 8 we a17 a16 a15 a14 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 a11 a10 a9 a8 nc i/o 9 i/o 10 i/o 11 i/o 12 vcc gnd i/o 13 i/o 14 i/o 15 i/o 16 lb hb oe a7 a6 lp62s16256fv-i a13 a5 a4 a12
lp62s16256f - i series preliminary (november, 2002, version 0 .0) 2 amic technology, corp. block diagram decoder 512 x 8192 memory array column i/o input data circuit control circuit vcc gnd i/o 8 i/o 1 a17 a16 a0 we hb input data circuit i/o 9 i/o 16 lb oe ce pin descriptions -- tsop pin no. symbol description 1 - 5, 18 - 27, 42 - 44 a0 - a17 address inputs 6 ce chip enable input 7 - 1 0, 13 - 16, 29 - 32, 35 - 38 i/o 1 - i/o 16 data inputs/outputs 17 we write enable input 39 lb lower byte enable input (i/o 1 to i/o 8 ) 40 hb higher byte enable input (i/o 9 to i/o 16 ) 41 oe output enable input 11, 33 vcc power 12, 34 gnd ground 28 nc no connection
lp62s16256f - i series preliminary (november, 2002, version 0 .0) 3 amic technology, corp. pin description - csp symbol description symbol description a0 - a17 address inputs hb higher byte enable input (i/o 9 - i/o 16 ) ce chip enable oe output enable i/o 1 - i/o 16 data input/output vcc power supply we write enable input gnd ground lb byte enable input (i/o 1 - i/o 8 ) nc no connection recomme nded dc operating conditions (t a = - 40 c to + 85 c) symbol parameter min. typ. max. unit vcc supply voltage 2. 7 3 3.6 v gnd ground 0 0 0 v v ih input high voltage 2. 2 - vcc + 0. 3 v v il input low voltage - 0.3 - +0.6 v c l output load - - 30 pf ttl outpu t load - - 1 -
lp62s16256f - i series preliminary (november, 2002, version 0 .0) 4 amic technology, corp. absolute maximum ratings* vcc to gnd ................................ .............. - 0.5v to + 4 . 0 v in, in/out volt to gnd ................... - 0.5v to vcc + 0.5v operating temperature, topr ................... - 40 c to +85 c storage temperature, tstg ..................... - 55 c to +125 c power dissipation, p t ................................ ................................ ...... 0.7w *comments stresses above those listed under "absolute maximum ratings" may cause permanent damage to this device. these are stress ratings only. functional operation of this device at these or any other conditions above those indicated in the operational sections of this specifica tion is not implied or intended. exposure to the absolute maximum rating conditions for extended periods may affect device reliability. dc electrical characteristics (t a = - 40 c to + 85 c, vcc = 2. 7 v to 3.6v, gnd = 0v) symbol parameter lp62s16256f - 55lli / 70lli unit conditions min. typ. max. ? i li ? input leakage current - - 1 m a v in = gnd to vcc ? i lo ? output leakage current - - 1 m a ce = v ih hb = v ih or oe = v ih or we = v ih v i/o = gnd to vcc i cc active power supply current - - 5 ma ce = v il , i i/o = 0ma i cc1 - 25 4 0 ma min. cycle, duty = 100% dynamic operating current ce = v i , i i/o = 0ma i cc2 - 5 1 5 ma ce = v il , v ih = vcc, v il = 0v, f = 1mhz, i i/o = 0 ma i sb - - 1 ma ce = v ih vcc 3.3v i sb1 standby current - 0.3 10 m a ce 3 vcc - 0.2v, vcc 3.3v v in 3 0v v ol output low voltage - - 0. 4 v i ol = 2 .1 ma v oh output high voltage 2.2 - - v i oh = - 1 . 0 ma
lp62s16256f - i series preliminary (november, 2002, version 0.0) 5 amic technolo gy, corp. truth table ce oe we lb hb i/o 1 to i/o 8 mode i/o 9 to i/o 16 mode vcc current h x x x x not selected not selected i sb1 , i sb x x x h h high - z high - z i sb1 , i sb l l read read i cc1 , i cc2 , i cc l l h l h read high - z i cc1 , i cc2 , i cc h l high - z read i cc1 , i cc2 , i cc l l write write i cc1 , i cc2 , i cc l x l l h write high - z i cc1 , i cc2 , i cc h l high - z write i cc1 , i cc2 , i cc l h h l x high - z high - z i cc1 , i cc2 , i cc l h h x l high - z high - z i cc1 , i cc2 , i cc note: x = h or l capacitance (t a = 25 c, f = 1.0mhz) symbol parameter min. max. unit conditions c in * input capacitance 6 pf v in = 0v c i/o * input/output capacitance 8 pf v i/o = 0v * these parameters are sampled and not 100% tested.
lp62s16256f - i series preliminary (november, 2002, version 0.0) 6 amic technolo gy, corp. ac characteristics (t a = - 40 c to +85 c, vcc = 2.7v to 3.6v) symbol parameter lp62s16256f - 55lli lp62s16256f - 70lli unit min. max. min. max. read cycle t rc read cycle time 55 - 70 - ns t aa address access time - 55 - 70 ns t ace chip enable access time - 55 - 70 ns t be byte enable access time - 55 - 70 ns t oe output enable to output valid - 30 - 35 ns t clz chip enable to output in low z 10 - 10 - ns t blz byte enable to output in low z 10 - 10 - ns t olz output enable to output in low z 5 - 5 - ns t chz chip disable to output in h igh z - 20 - 25 ns t bhz byte disable to output in high z - 20 - 25 ns t ohz output disable to output in high z - 20 - 25 ns t oh output hold from address change 5 - 5 - ns write cycle t wc write cycle time 55 - 70 - ns t cw chip enable to end of write 50 - 60 - ns t bw byte enable to end of write 50 - 60 - ns t as address setup time 0 - 0 - ns t aw address valid to end of write 50 - 60 - ns t wp write pulse width 40 - 50 - ns t wr write recovery time 0 - 0 - ns t whz write to output in high z - 25 - 25 ns t dw data to write time overlap 25 - 30 - ns t dh data hold from write time 0 - 0 - ns t ow output active from end of write 5 - 5 - ns note: t chz , t bhz and t ohz and t whz are defined as the time at which the outputs achieve the open circuit condition and are not referred to output voltage levels.
lp62s16256f - i series preliminary (november, 2002, version 0.0) 7 amic technolo gy, corp. timing waveforms read cycle 1 (1, 2, 4) t rc t oh t aa t oh address d out read cycle 2 (1, 2, 3) t rc t aa address t ace t chz 5 ce hb, lb t bhz 5 oe t clz 5 t be t blz 5 t oe t olz 5 t ohz 5 d out notes: 1. we is high for read cycle. 2. device is continuously ena bled ce = v il , hb = v il and, or lb = v il . 3. address valid prior to or coincident with ce and ( hb and, or lb ) transition low. 4 . oe = v il . 5. transition is measured 500mv from steady state. this parameter is sampled and not 100% tested.
lp62s16256f - i series preliminary (november, 2002, version 0.0) 8 amic technolo gy, corp. timing waveforms (continued) write cycle 1 (write enable controlled) t wc t aw address data in data out we hb, lb ce t wr 3 t cw t bw t as 1 t wp 2 t dw t dh t ow t whz 4
lp62s16256f - i series preliminary (november, 2002, version 0.0) 9 amic technolo gy, corp. timing waveforms (continued) write cycle 2 (chip enable controlled) t wc t aw address data in data out we hb, lb ce t wr 3 t cw 2 t bw t as 1 t wp t dw t dh t ow t whz 4
lp62s16256f - i series preliminary (november, 2002, version 0.0) 10 amic technolo gy, corp. timing waveforms (continued) write cycle 3 (byte enable controlled) t wc t aw address data in data out we hb, lb ce t wr 3 t cw t bw 2 t as 1 t wp t dw t dh t ow t whz 4 notes: 1. t as is measured from the address valid to the beginning of w rite. 2. a write occurs during the overlap (t wp , t bw ) of a low ce , we and ( hb and , or lb ). 3. t wr is measured from the earliest of ce or we or ( hb and , or lb ) going high to the end of the write cycle. 4. oe level is high or low. 5. transition is measured 500mv from steady state. this parameter is sampled and no t 100% tested.
lp62s16256f - i series preliminary (november, 2002, version 0.0) 11 amic technolo gy, corp. ac test conditions input pulse levels 0.4v to 2.4v input rise and fall time 5 ns input and output timing reference levels 1.5v output load see figures 1 and 2 30pf * including scope and jig. * including scope and jig. c l ttl 5pf c l ttl figure 1. output load figure 2. output load for t clz , t olz , t chz , t ohz , t whz , and t ow data retention characteristics (t a = - 40 c to 85 c) symbol parameter min. typ. max. unit conditions v dr vcc for data retention 2.0 - 3.6 v ce 3 vcc - 0.2v i ccdr data retention curr ent - 0.08 3* m a vcc = 2.0v, ce 3 vcc - 0.2v v in 3 0v t cdr chip disable to data retention time 0 - - ns t r operation recovery time t rc - - ns see retention waveform t vr vcc rising time from data retention voltage t o operating voltage 5 - - ms * lp62s16256f - 55lli / 70lli i ccdr : max. 1 m a at t a = 0 c to + 40 c
lp62s16256f - i series preliminary (november, 2002, version 0.0) 12 amic technolo gy, corp. low vcc data retention waveform vcc ce t cdr v ih 2.7v t r v ih 2.7v data retention mode t vr v dr 3 2.0v ce 3 v dr - 0.2v ordering information part no. access time (ns) operating current max. (ma) standby current max. ( m m a) package lp62s16256fv - 55lli 40 10 44l tsop lp62s16256fu - 55lli 55 40 10 48l csp lp62s16256fv - 70lli 40 10 44l tsop lp62s16256fu - 70lli 70 40 10 48l csp
lp62s16256f - i series preliminary (november, 2002, version 0.0) 13 amic technolo gy, corp. package information tsop 44l type ii outline dimensions unit: inches/mm 44 1 d e h e 0.254 l 1 l a 1 a 2 a s b e d y l 1 c l 23 22 symbol dimension in inch dimension in mm min. nom. max. min. nom. max. a - - 0.047 - - 1.20 a 1 0.002 - - 0.05 - - a 2 0.037 0.039 0.041 0.95 1.00 1.05 b 0.010 0.014 0.018 0.25 0.35 0.45 c - 0.006 - - 0.15 - d 0.721 0.725 0.729 18.31 1 8.41 18.51 e 0.396 0.400 0.404 10.06 10.16 10.26 e - 0.031 - - 0.80 - h e 0.455 0.463 0.471 11.56 11.76 11.96 l 0.016 0.020 0.024 0.40 0.50 0.60 l 1 - 0.031 - - 0.80 - s - - 0.036 - - 0.93 y - - 0.004 - - 0.10 q 0 - 5 0 - 5 notes: 1. dimension d&e do not include interlead flash. 2. dimension b does not include dambar protrusion/intrusion. 3. dimension s includes end flash.
lp62s16256f - i series preliminary (november, 2002, version 0.0) 14 amic technolo gy, corp. package information 48ld csp ( 6 x 8 mm ) outline dimensions unit: mm (48tfbga) a 1 a 2 a b c d e f g h top view ball#a1 corner side view c seating plane // 0.25 c a (0.36) a b c d e f g h 1 2 3 4 5 6 1 2 3 4 5 6 c 0.10 c s 0.25 s a b b (48x) bottom view ball*a1 corner e e 1 e b e d 1 d a 0.20(4x) 0.10 c dimens ions in mm symbol min. nom. max. a 1.04 1.14 1.24 a 1 0.20 0.25 0.30 a 2 0.48 0.53 0.58 d 5.90 6.00 6.10 e 7.90 8.00 8.10 d 1 --- 3.75 --- e 1 --- 5.25 --- e --- 0.75 --- b 0.30 0.35 0.40 note: 1. the ball diameter, ball pitch, stand - off & pack age thickness are different from jedec spec mo192 (low profile bga family). 2. primary datum c and seating plane are defined by the spherical crowns of the solder balls. 3. dimension b is measured at the maximum. there shall be a minimum clearance of 0.25mm bet ween the edge of the solder ball and the body edge. 4. ball pad opening of substrate is f 0.3mm (smd) suggest to design the pcb land size as f 0.3mm (nsmd)

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